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Trench Gate, High Speed, IGBTs
For PDP Applications
IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1
VCES = ICP = VCE(sat) ≤
90N33TC
330V 360A 1.80V
90N33TCD1
Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC= 25°C (Chip Capability) Lead Current Limit TC = 110°C TC < 150°C, tp < 10μs TC < 150°C, tp < 10μs, Duty cycle < 1% TC = 25°C
Maximum Ratings 330 ±20 ±30 90 75 38 60 360 200 -55 ... +150 150 -55 ... +150 V V V A A A A A W °C °C °C °C °C Nm/lb.in. g g G = Gate E = Emitter
G C E C (Tab)
TO-263 AA (IXGA)
G E C (Tab)
TO-3P (IXGQ)
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-263 TO-3P
300 260 1.13/10 2.5 5.
IXGQ90N33TCD1 Datasheet
