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IXGN82N120B3H1 - High-Speed Low-Vsat PT IGBT

Features

  • z Optimized for Low Conduction and Switching Losses z Square RBSOA z High Current Capability z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching V CES I C110 VCE(sat) = 1200V = 64A ≤£ 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 145 A 64 A 42 A 550 A 41 A 750 mJ ICM = 164 A @VCE ≤ VCES 595 W -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 3000 V~ 1.5/13 1.
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