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IXGK64N60B3D1 - Medium speed low Vsat PT IGBT

Features

  • z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement.

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Full PDF Text Transcription

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GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE(sat) tfi(typ) = 600V = 64A ≤£ 1.8V = 88ns Symbol VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Mounting torque (TO-264) Mounting force (PLUS247) Maximum Ratings 600 V 600 V ±20 V ±30 V 64 A 400 A ICM = 200 A 460 -55 ... +150 150 -55 ... +150 1.13 / 10 20..120 / 4.5..27 W °C °C °C Nm/lb.in. N/lb. Maximum lead temperature for soldering 1.6mm (0.062 in.
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