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IXGK120N120B3 - High Speed Low Vsat PT IGBT

Features

  • z Optimized for Low Conduction and Switching Losses z Square RBSOA z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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Advance Technical Information GenX3TM 1200V IGBTs IXGK120N120B3 IXGX120N120B3 High Speed Low Vsat PT IGBTs for 3-20 kHz Switching VCES = IC90 = VCE(sat) ≤ 1200V 120A 3.0V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC90 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C 200 A 120 A 120 A 370 A ICM = 240 A VCES < 1200 V 830 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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