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IXGK320N60B3 - Medium-Speed Low-Vsat PT IGBT

Features

  • z Optimized for Low Conduction and Switching Losses z High Current Capability z Square RBSOA Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 600V IGBTs IXGK320N60B3 IXGX320N60B3 VCES = IC90 = VCE(sat) ≤ 600V 320A 1.6V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC90 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 600 V 600 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 500 A 320 A 160 A 1200 A ICM = 320 A VCE < VCES V 1700 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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