Datasheet4U Logo Datasheet4U.com

IXGK60N60C2D1 - IGBT

Features

  • Very high frequency IGBT and anti-parallel FRED in one package.
  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

📥 Download Datasheet

Full PDF Text Transcription

Click to expand full text
HiPerFASTTM IGBT with Diode IXGK 60N60C2D1 IXGX 60N60C2D1 C2-Class High Speed IGBTs V I CES VC25 t CE(sat) fi(typ) = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 60 A 48 A 300 A ICM = 100 A 480 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.
Published: |