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IXGH48N60C3C1 - GenX3 600V IGBT

Features

  • z z z z z z G C E C ( TAB ) G = Gate E = Emitter = Collector TAB = Collector Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode Fast Switching Avalanche Rated International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C Charact.

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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching IXGH48N60C3C1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 48 20 250 30 300 ICM = 100 @ < VCES 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.
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