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IXGH48N60A3D1 - Ultra Low Vsat PT IGBT

Features

  • z Optimized for Low Conduction Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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GenX3TM 600V IGBT w/Diode Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH48N60A3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.35V TO-247 AD Symbol Test Conditions VCES VCGR VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IC110 ICM SSOA (RBSOA) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque Maximum Ratings 600 V 600 V ± 20 V ± 30 V 48 A 300 A ICM = 96 A @ ≤ VCES 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 1.13/10 °C °C Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.
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