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IXFV52N30P - PolarHT HiPerFET Power MOSFET

Download the IXFV52N30P datasheet PDF. This datasheet also covers the IXFH52N30P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 66 V z V nA µA µA mΩ z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH52N30P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFV110N25T Trench Gate Power HiperFET IXYS Corporation
IXFV110N25TS Trench Gate Power HiperFET IXYS Corporation
IXFV12N100P Polar HiPerFET Power MOSFETs IXYS Corporation
IXFV12N100PS Polar HiPerFET Power MOSFETs IXYS Corporation
IXFV14N80P PolarHV HiPerFET Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFV52N30PS PolarHT HiPerFET Power MOSFET
IXFV110N10P PolarHT HiPerFET Power MOSFET
IXFV110N10PS PolarHT HiPerFET Power MOSFET
IXFV12N80P Power MOSFET
IXFV12N80PS Power MOSFET

Full PDF Text Transcription

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Advanced Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 52N30P IXFV 52N30P IXFV 52N30PS VDSS ID25 trr RDS(on) www.DataSheet4U.com = 300 V = 52 A ≤ 66 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transinet TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 52 150 52 30 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb TO-247 (IXFH) G D S (TAB) PLUS220 (IXFV) G D S PLUS220SMD (IXFV__S) 1.6 mm (0.062 in.
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