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IXFV110N10PS - PolarHT HiPerFET Power MOSFET

Features

  • z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99212A(01/05) IXFH 110N10P IXFV 110N10P IXFV 110N10PS www. DataSheet4U. com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ.

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Full PDF Text Transcription

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PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS(on) = 100 V = 110 A = 15 mΩ www.DataSheet4U.com TO-247 (IXFH) Maximum Ratings 100 100 ± 20 ± 30 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ...
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