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IXFV110N25TS - Trench Gate Power HiperFET

Download the IXFV110N25TS datasheet PDF. This datasheet also covers the IXFV110N25T variant, as both devices belong to the same trench gate power hiperfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z International standard packages Avalanche rated www. DataSheet4U. net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 4.5 ± 200 V V nA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFV110N25T_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFV110N25T Trench Gate Power HiperFET
IXFV12N100P Polar HiPerFET Power MOSFETs
IXFV12N100PS Polar HiPerFET Power MOSFETs
IXFV14N80P PolarHV HiPerFET Power MOSFET
IXFV14N80PS Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C N/lb. g PLUS220 (IXFV) G D S (TAB) PLUS220SMD (IXFV_S) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062 in.
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