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PolarHVTM HiPerFET Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 22N60P IXFV 22N60P IXFV 22N60PS
VDSS = 600 V ID25 = 22 A RDS(on) ≤ 350 m Ω trr ≤ 200 ns
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FMCd Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous Tranisent
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque Mounting Force
(TO-247) (PLUS220)
TO-247 PLUS220 & PLUS220SMD
TO-247 (IXFH) Maximum Ratings
600 V 600 V
±30 ±40
V V
GDS
22 A 66 A PLUS220 (IXFV) 22 A
40 mJ 1.
IXFV22N60P Datasheet
