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IXFV26N50PS - Avalanche Rated Fast Instrinsic Diode

Download the IXFV26N50PS datasheet PDF. This datasheet also covers the IXFH26N50P variant, as both devices belong to the same avalanche rated fast instrinsic diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99276A(09/05) IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 16 26 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 37.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH26N50P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet www.DataSheet4U.com IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 trr RDS(on) = = ≤ ≤ 500 V 26 A 230 mΩ 200 ns Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuos Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 26 78 26 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 (IXFH) VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) 1.6 mm (0.062 in.
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