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Preliminary Technical Information
GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK360N10T IXFX360N10T
VDSS =
ID25 =
RDS(on) ≤
trr
≤
100V 360A 2.9mΩ 130ns
TO-264 (IXFK)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
PD
dv/dt
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
1.6mm (0.062 in.
IXFK360N10T Datasheet
