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IXFK38N80Q2 - Power MOSFET

This page provides the datasheet information for the IXFK38N80Q2, a member of the IXFN38N80Q2 Power MOSFET family.

Datasheet Summary

Features

  • Double metal process for low gate resistance.
  • International standard packages.
  • Epoxy meet UL 94 V-0, flammability classification.
  • Avalanche energy and current rated.
  • Fast intrinsic Rectifier.
  • miniBLOCK package version with Aluminum Nitrate isolation Advantages.
  • Easy to mount.
  • Space savings.
  • High power density Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 800 3.

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Datasheet preview – IXFK38N80Q2

Datasheet Details

Part number IXFK38N80Q2
Manufacturer IXYS Corporation
File Size 155.18 KB
Description Power MOSFET
Datasheet download datasheet IXFK38N80Q2 Datasheet
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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md FC 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 VDSS ID25 trr RDS(on) = 800V = 38A ≤ 220mΩ ≤ 250ns TO-264 (IXFK) Maximum Ratings 800 800 ± 30 ± 40 38 150 38 4 20 735 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 20..120 /4.5..27 10 6 30 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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