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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK32N100P IXFX32N100P
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s
Mounting torque (IXFK)
Mounting force
(IXFX)
TO-264 TO-247
Maximum Ratings
1000 1000
± 30 ± 40
32 75
16 1.5
V V
V V
A A
A J
10
960
-55 ... +150 150
-55 ... +150
300 260
1.13/10
20..120/4.5..27
10 6
V/ns
W
°C °C °C °C °C Nm/lb.in. Nm/lb.
IXFK32N100P Datasheet
