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Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT50N30Q3 IXFH50N30Q3
D
G S
Symbol
VDSS VDGR
VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
300
V
300
V
20
V
30
V
50
A
150
A
50
A
1.5
J
50
V/ns
690
W
-55 ... +150 150
-55 ... +150
C C C
300
°C
260
°C
1.13 / 10
4.0 6.0
Nm/lb.in.
IXFH50N30Q3 Datasheet
