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IXFH50N60P3 - Power MOSFET

Download the IXFH50N60P3 datasheet PDF. This datasheet also covers the IXFT50N60P3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFT50N60P3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH50N60X Power MOSFET IXYS
IXFH50N60X N-Channel MOSFET INCHANGE
IXFH50N30Q3 Power MOSFET IXYS
IXFH50N85X Power MOSFET IXYS
IXFH52N30P PolarHT HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH50N20 Power MOSFET
IXFH52N30Q Power MOSFET
IXFH52N50P2 N-Channel Power MOSFET
IXFH58N20 Power MOSFET
IXFH58N20Q HiPerFET Power MOSFETs

Full PDF Text Transcription

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Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 Maximum Ratings 600 V 600 V  30 V  40 V 50 A 125 A 25 A 1 J 35 V/ns 1040 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 4.0 5.5 6.0 Nm/lb.
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