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IXFH52N30Q - Power MOSFET

Download the IXFH52N30Q datasheet PDF. This datasheet also covers the IXFK52N30Q variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low gate charge.
  • International standard packages.
  • Epoxy meet UL 94 V-0, flammability classification.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK52N30Q_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFH50N60X N-Channel MOSFET INCHANGE
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH52N50P2 N-Channel Power MOSFET
IXFH50N20 Power MOSFET
IXFH50N60P3 Power MOSFET
IXFH58N20 Power MOSFET
IXFH58N20Q HiPerFET Power MOSFETs

Full PDF Text Transcription

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q VDSS ID25 RDS(on) trr = 300 V = 52 A = 60 m W £ 250 ns Maximum Ratings 300 300 ±20 ±30 52 208 52 30 1.5 5 360 -55 ... +150 150 -55 ...
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