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IXBK75N170 - Bipolar MOS Transistor

Features

  • z International Standard Packages z High Blocking Voltage z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement z Intergrated Diode Can Be Used for Protection.

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Full PDF Text Transcription

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Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES = I = C110 ≤ VCE(sat) 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 V 1700 V ±20 V ±30 V TC = 25°C (Chip Capabilitty) TC = 25°C (Lead RMS Limit) TC = 110°C TC = 25°C, 1ms 200 A 160 A 75 A 580 A VGE= 15V, TVJ = 125°C, RG = 1Ω ICM = 150 A Clamped Inductive Load VCE < 0.8 • VCES TC = 25°C 1040 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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