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IXBK55N300 - Monolithic Bipolar MOS Transistor

Features

  • High Blocking Voltage.
  • International Standard Packages.
  • Low Conduction Losses.
  • High Current Handling Capability.
  • MOS Gate Turn-On - Drive Simplicity Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ±25 V ±35 V TC = 25°C (Chip Capability) T = 110°C C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load 130 A 55 A 600 A ICM = 110 A 1500 V VGE = 15V, TJ = 125°C, RG = 10, VCE = 1250V, Non-Repetitive 10 µs TC = 25°C 625 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120/4.5..27 Nm/lb.
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