Datasheet4U Logo Datasheet4U.com

IXBK64N250 - Monolithic Bipolar MOS Transistor

Features

  • High Blocking Voltage.
  • Low Switching Losses.
  • High Current Handling Capability.
  • Anti-Parallel Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXBD4410 Half Bridge Driver Chipset IXYS Corporation
IXBD4411 Half Bridge Driver Chipset IXYS Corporation
IXBF9N140 High Voltage BIMOSFET IXYS Corporation
IXBF9N140 Power MOSFET IXYS Corporation
IXBF9N160 High Voltage BIMOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBK55N300 Monolithic Bipolar MOS Transistor
IXBK75N170 Bipolar MOS Transistor
IXBK75N170A Bipolar MOS Transistor
IXBA12N300HV Bipolar MOS Transistor
IXBA14N300HV Bipolar MOS Transistor

Full PDF Text Transcription

Click to expand full text
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (IXBK) Symbol VCES VCGR VGES V GEM I C25 I LRMS IC100 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg T L Md F C Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 V 2500 V ±25 V ±35 V T C = 25C (Chip Capability) Lead Current Limit, RMS 156 A 120 A TC = 110°C TC = 25°C, 1ms 64 A 800 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 160 A Clamped Inductive Load V < 0.8 • V CE CES VGE = 15V, TJ = 125°C, RG = 5, VCE = 1250V, Non-Repetitive 10 µs TC = 25°C 735 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.
Published: |