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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF32N300
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
3000
V
3000
V
VGES VGEM
Continuous Transient
± 20
V
± 30
V
IC25
TC = 25°C
40
A
IC90
TC = 90°C
22
A
ICM
TC = 25°C, 1ms
250
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 10
ICM = 80
A
(RBSOA) Clamped Inductive Load
V 2400
V
CES
PC
TC = 25°C
160
W
T
-55 ... +150
°C
J
TJM
150
°C
T
-55 ... +150
°C
stg
TL
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062 in.) from Case for 10s
FC VISOL Weight
Mounting Force 50/60Hz, 1 Minute
20..120 / 4.5..27 3000 5
Nm/lb.in.
IXBF32N300 Datasheet
