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IXBF28N300 - Bipolar MOS Transistor

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Datasheet preview – IXBF28N300

Datasheet Details

Part number IXBF28N300
Manufacturer IXYS
File Size 202.43 KB
Description Bipolar MOS Transistor
Datasheet download datasheet IXBF28N300 Datasheet
Additional preview pages of the IXBF28N300 datasheet.

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Full PDF Text Transcription

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Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = IC90 = VCE(sat)  3000V 28A 2.7V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 3000 ± 20 ± 30 TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 50 28 220 ICM = 220 VCE  1500 10 216 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering 300 Plastic Body for 10s 260 Mounting Force 20..120 / 4.5..
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