Click to expand full text
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBF20N300
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
3000
V
3000
V
VGES VGEM
Continuous Transient
± 20
V
± 30
V
IC25
TC = 25°C
34
A
IC110
TC = 110°C
14
A
ICM
TC = 25°C, 1ms
150
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 20
ICM = 130
A
(RBSOA) Clamped Inductive Load
1500
V
PC
TC = 25°C
150
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
T
Maximum Lead Temperature for Soldering
300
°C
L
1.6 mm (0.062 in.) from Case for 10s
FC VISOL Weight
Mounting Force 50/60Hz, 1 Minute
20..120 / 4.5..27 4000 5
Nm/lb.in.
IXBF20N300 Datasheet
