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Preliminary Technical Information
TrenchMVTM
IXTC280N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 145 3.6
V A mΩ
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD VISOL FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient
55 55
± 20
V V
V
TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
145 A 75 A
600 A
40 A 1.5 J
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω
TC = 25°C
3 V/ns
160
-55 ... +175 175
-55 ... +175
W
°C °C °C
1.6 mm (0.062 in.
IXTC280N055T Datasheet
