Datasheet4U Logo Datasheet4U.com

IXTC220N075T - Power MOSFET

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTC220N075T N-Channel MOSFET INCHANGE
IXTC220N055T N-Channel MOSFET INCHANGE
IXTC200N075T N-Channel MOSFET INCHANGE
IXTC200N085T N-Channel MOSFET INCHANGE
IXTC200N10T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTC200N085T Power MOSFET
IXTC200N10T Power MOSFET
IXTC240N055T Power MOSFET
IXTC250N075T Power MOSFET
IXTC26N50P PolarHV Power MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Technical Information TrenchMVTM IXTC220N075T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 115 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient 75 75 ± 20 V V V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 115 A 75 A 600 A 25 A 1.0 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 3 V/ns 150 -55 ... +175 175 -55 ... +175 W °C °C °C 1.6 mm (0.062 in.
Published: |