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TrenchMVTM Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
IXTC200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg
TL
VISOL Md Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
Transient
Maximum Ratings 100 100
± 30
V V
V
TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
TC = 25°C
101 75 500
40 1.5
160
-55 ... +175 175
-55 ... +175
A A A
A J
W
°C °C °C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds
300 °C 260 °C
50/60Hz, t = 1 minute, IISOL < 1mA, RMS
2500
Mounting force
11..65 / 2.5..14.6
V N/lb.
IXTC200N10T Datasheet
