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IXSH45N100 - Low VCE(sat) IGBT - Short Circuit SOA Capability

Features

  • International standard packages.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 4 mA, VCE = VGE.

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Full PDF Text Transcription

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www.DataSheet4U.com Low VCE(sat) IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 75 45 180 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms TO-247 AD (IXSH) G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque 1.13/10 Nm/lb.in.
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