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IXSH40N60A - Low VCE(sat) IGBT

Download the IXSH40N60A datasheet PDF. This datasheet also covers the IXSM40N60 variant, as both devices belong to the same low vce(sat) igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 250 µA, VGE = 0 V = 4 mA, VCE = VGE V CE = 0.8.
  • VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSM40N60_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXSH40N60 High Speed IGBT ETC
IXSH40N60B High Speed IGBT ETC
IXSH40N60B High Speed IGBT IXYS
IXSH45N120 High Voltage/ Low VCE(sat) IGBT ETC
IXSH45N120 High Voltage IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXSH40N60 Low VCE(sat) IGBT
IXSH45N100 Low VCE(sat) IGBT - Short Circuit SOA Capability
IXSH15N120A IGBT
IXSH15N120AU1 IGBT
IXSH15N120BD1 Improved SCSOA Capability

Full PDF Text Transcription

Click to expand full text
VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol www.DataSheet4U.com V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ...
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