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IXSA20N60B2D1 - High Speed IGBT

Features

  • International standard packages.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast fall time for switching speeds up to 20 kHz.

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Full PDF Text Transcription

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High Speed IGBT IXSA 20N60B2D1 IXSP 20N60B2D1 Short Circuit SOA Capability Preliminary Data Sheet VCES = 600 V IC25 = 35 A VCE(sat) = 2.5 V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VCGlaEm= p1e5dVi,nTdJu=ct1iv2e5°loCa,dRG = 82Ω tSC (SCSOA) PC TJ TJM Tstg Weight VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Maximum Ratings 600 600 ± 20 ± 30 35 20 11 60 @ 0IC.M8 = 32 VCES 10 V V V V A A A A A μs 190 -55 ... +150 150 -55 ...
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