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IXGN60N60C2D1 - IGBT

Download the IXGN60N60C2D1 datasheet PDF. This datasheet also covers the IXGN60N60C2 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Package miniBLOC z Aluminium Nitride Isolation - High Power Dissipation z Anti-Parallel Ultra Fast Diode z Isolation Voltage 3000 V~ z LCoowndVuCcEt(isoatn) foLrosMsiensimum On-State z MOS Gate Turn-on - Drive Simplicity z Low Collector-to-Case Capacitance (< 50 pF) z Low Package Inductance (< 5 nH) - Easy to Drive and to Protect.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGN60N60C2-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGN100N170 High Voltage IGBT IXYS
IXGN120N60A3 IGBT IXYS
IXGN120N60A3D1 IGBT IXYS
IXGN200N170 High Voltage IGBT IXYS
IXGN200N60A2 IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGN60N60C2 IGBT
IXGN60N60 Ultra-Low VCE(sat) IGBT
IXGN200N60 HiPerFAST IGBT
IXGN200N60A HiPerFAST IGBT
IXGN200N60B IGBT

Full PDF Text Transcription

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HiPerFASTTM IGBTs with Diode IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs VCES = IC110 = VCE(sat) trr ≤ = 600V 60A 2.5V 35ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped Inductive Load TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting Torque Terminal Connection Torque (M4) E 60C2 E 60C2D1 Maximum Ratings 600 600 V V ±20 V ±30 V 75 A 60 A 300 A ICM = 100 @ VCE ≤ 600 480 A V W -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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