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IXFV18N60P - Power MOSFET

Features

  • l l l nA μA μA mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99390E(03/06) © 2006 IXYS All rights reserved IXFH 18N60P IXFV 18N60P IXFV 18N60PS www. DataSheet4U. com Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 9 16 2500.

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Full PDF Text Transcription

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www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on) trr = = ≤ ≤ 600 V 18 A 400 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 18 45 18 30 1.0 10 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 AD (IXFH) D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV...S) 1.6 mm (0.062 in.
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