IXFP180N10T2 - Power MOSFET

Features

International Standard Packages.
175°C Operating Temperature.
High Current Handling Capability.
Fast Intrinsic Rectifier.
Dynamic dV/dt Rated.
Low R DS(on) Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS Corporation

Datasheet Details

Part number	IXFP180N10T2
Manufacturer	IXYS Corporation
File Size	311.25 KB
Description	Power MOSFET
Datasheet	IXFP180N10T2 Datasheet
Additional preview pages of the IXFP180N10T2 datasheet.

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Full PDF Text Transcription

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ  175C TC = 25C 180 120 450 90 750 15 480 -55 ... +175 175 -55 ... +175 A A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.

Published: May 13, 2011 |