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IXFL60N80P - PolarHV HiPerFET Power MOSFET ISOPLUS264

Features

  • l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS IISOL ≤1 mA Mounting force t = 1 min t=1s 300 2500 3000 28..150 / 6.4..30 5 l VISOL FC Weight V~ V~ N/lb g l l Advantages l l.

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Full PDF Text Transcription

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PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 60N80P VDSS ID25 = 800 V = 40 A RDS(on) ≤ 150 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 800 800 ±30 ±40 40 150 30 100 5 20 625 -55 ... +150 150 -55 ...
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