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HiPerFETTM Power MOSFET ISOPLUS264TM
(Electrically Isolated Tab) Single-Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC VISOL Weight
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IXFL34N100
VDSS = ID25 = RDS(on) ≤
1000V 30A 280mΩ
ISOPLUS264
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1000 1000 ± 20 ± 30 30 136 34 4 5 550 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C N/lb. V~ V~ g Features
z
G D S ISOLATED TAB
G = Gate S = Source
D = Drain
1.6 mm (0.063 in.
IXFL34N100 Datasheet
