IXFL39N90 - HiPerFET Power MOSFETs ISOPLUS264

Features

z RDS(on) t = 900 V = 34 A = 220 mΩ < ns.

IXYS Corporation

Datasheet Details

Part number	IXFL39N90
Manufacturer	IXYS Corporation
File Size	548.06 KB
Description	HiPerFET Power MOSFETs ISOPLUS264
Datasheet	IXFL39N90 Datasheet
Additional preview pages of the IXFL39N90 datasheet.

📁 Similar Datasheet

IXFL38N100Q2 - Power MOSFET (IXYS)
IXFL44N100P - Power MOSFET (Littelfuse)
IXF18102 - 10Gbps Physical Layer Device (Intel Corporation)
IXF18104 - 10 Gigabit Lan PHY (Intel Corporation)
IXFA102N15T - N-Channel MOSFET (INCHANGE)
IXFA110N15T2 - N-Channel MOSFET (INCHANGE)
IXFA12N65X2 - Power MOSFET (IXYS)
IXFA12N65X2 - N-Channel MOSFET (INCHANGE)
IXFA130N10T - N-Channel MOSFET (INCHANGE)
IXFA130N10T2 - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS Corporation

IXFL30N120P - Polar HiPerFET Power MOSFET
IXFL32N120P - Polar HiPerFET Power MOSFET
IXFL34N100 - HiPerFET Power MOSFET ISOPLUS264
IXFL36N110P - Polar Power MOSFET HiPerFET
IXFL38N100P - Polar Power MOSFET HiPerFET
IXFL100N50P - PolarHV HiPerFET Power MOSFET
IXFL44N100P - Polar Power MOSFET HiPerFET
IXFL44N60 - HiPerFET Power MOSFETs Single Die MOSFET

Full PDF Text Transcription

Click to expand full text

HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 900 900 ± 20 ± 30 34 154 39 64 4 5 580 -40 ... +150 150 -40 ...

Published: May 13, 2011 |