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Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL
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IXFL38N100P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 29A 230mΩ 300ns
ISOPLUS i5-PakTM (HV)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 29 120 19 2 15 520 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb.
IXFL38N100P Datasheet
