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IXFL60N60 - MOSFET

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 60N60 (Electrically Isolated Backside) Single Die MOSFET VDSS ID25 RDS(on) = 600 V = 60 A = 80 mΩ Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD FC TJ TJM Tstg VISOL Md Weight Symbol VDSS VGH(th) IGSS IDSS RDS(on) Test Conditions TJ= 25°C to 150°C TJ= 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC= 25°C Mouting Force Maximum Ratings 600 V 600 V ±20 V ±30 V 60 A 240 A 60 A 64 mJ 4J 5 V/ns 700 30...150/7...33 -55 ... +150 150 -55 ...
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