IXFL44N80 - HiPerFET Power MOSFETs ISOPLUS264

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

IXYS Corporation

Datasheet Details

Part number	IXFL44N80
Manufacturer	IXYS Corporation
File Size	533.92 KB
Description	HiPerFET Power MOSFETs ISOPLUS264
Datasheet	IXFL44N80 Datasheet
Additional preview pages of the IXFL44N80 datasheet.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net IXFL 44N80 VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ± 20 ± 30 44 176 44 64 4 5 550 -55 ... +150 150 -55 ...

Published: May 13, 2011 |