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TrenchTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH86N30T IXFT86N30T
VDSS = 300V ID25 = 86A RDS(on) 46m
TO-247 (IXFH)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD
dV/dt
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C
TC = 25C IS IDM, VDD VDSS, TJ 150°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
300
V
300
V
20
V
30
V
86
A
190
A
43
A
1.5
J
860
W
20
V/ns
-55 to +150
C
+150
C
-55 to +150
C
300
C
260
C
1.13/10
Nm/lb.in.
6.0
g
4.
IXFH86N30T Datasheet
