IXFH80N65X2 - N-Channel MOSFET

Datasheet Summary

Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXFH80N65X2
Manufacturer	INCHANGE
File Size	256.98 KB
Description	N-Channel MOSFET
Datasheet	IXFH80N65X2 Datasheet
Additional preview pages of the IXFH80N65X2 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 160 PD Total Dissipation 890 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.15 UNIT ℃/W IXFH80N65X2 isc website：www.iscsemi.

Published: Oct 7, 2020 |