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Advance Technical Information
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH150N17T2 IXFT150N17T2
VDSS ID25
RDS(on) trr
= = ≤ ≤
175V 150A 12.0mΩ 160ns
TO-247 (IXFH)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 175 175 ± 20 ± 30 150 400 75 1.0 15 880 -55 ... +175 175 -55 ... +175 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.
IXFH150N17T2 Datasheet
