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IXFH150N15P - Power MOSFET

This page provides the datasheet information for the IXFH150N15P, a member of the IXFK150N15P Power MOSFET family.

Datasheet Summary

Features

  • z z Maximum Ratings 150 150 ± 20 ± 30 150 75 340 60 80 2.5 10 V V G V V A A A A mJ J V/ns G D D S (TAB) TO-264(SP) (IXTK) D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.13/10 Nm/lb. in. 5.5 10 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VD.

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Datasheet Details

Part number IXFH150N15P
Manufacturer IXYS Corporation
File Size 131.36 KB
Description Power MOSFET
Datasheet download datasheet IXFH150N15P Datasheet
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Advance Technical Information www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A RDS(on) ≤ 13 mΩ TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C 714 -55 ... +175 175 -55 ... +175 300 W °C °C °C °C Features z z Maximum Ratings 150 150 ± 20 ± 30 150 75 340 60 80 2.
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