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TrenchHVTM Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFH150N17T
VDSS ID25
RDS(on)
= 175V = 150A ≤ 12mΩ
TO-247
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 175 175 ± 30 150 75 400 75 1.5 15 830 -55 ... +175 175 -55 ... +175 V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g Advantages
z z z
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z z
International standard package Avalanche rated z 175°C Operating Temperature z High current handling capability
1.6mm (0.062in.
IXFH150N17T Datasheet
