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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS
VDSS ID25
RDS(on)
trr
= 800 V = 14 A ≤ 720 mΩ ≤ 250 ms
TO-247 (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 800 800 ± 30 ± 40 14 40 7 30 500 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C PLUS220 (IXFV) G D
(TAB) D (TAB)
TO-3P (IXFQ)
S
TO-268 (IXFT)
G S D (TAB)
G
D (TAB)
1.6 mm (0.062 in.
IXFH14N80P Datasheet
