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IXFC96N15P - PolarHT HiPerFET Power MOSFET ISOPLUS220

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 96N15P VDSS = 150 V ID25 = 42 A RDS(on) = 26 mΩ < 200 ns trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, 1 minute Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC TC TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C = 25°C = 25°C Maximum Ratings 150 150 ±20 ±30 42 250 60 40 1.0 10 120 -55 ... +175 175 -55 ... +150 300 11...65/2.4...
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