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IXFC80N10 - HiPerFETTM MOSFET ISOPLUS220

Features

  • l l l l l 1.6 mm (0.062 in. ) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(.

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Full PDF Text Transcription

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC 80N10 VDSS ID25 RDS(on) trr = 100 V = 80 A = 12.5 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 100 100 ± 20 ± 30 80 55 320 80 50 2.5 5 230 -55 ... +150 150 -55 ...
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