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PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFC52N30P
VDSS ID25
RDS(on)
= 300 V = 32 A = 75 mΩ
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 32 150 52 30 1.0 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb
ISOPLUS220TM (IXFC) E153432
G D S D = Drain TAB = Drain
G = Gate S = Source
1.6 mm (0.062 in.
IXFC52N30P Datasheet
