Datasheet4U Logo Datasheet4U.com

IXFB82N60P - PolarHV HiPerFET Power MOSFET

Features

  • z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages z z z Plus 264TM package for clip or spring Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFB150N65X2 Power MOSFET IXYS
IXFB44N100P Power MOSFET Littelfuse
IXFB44N100P N-Channel Power MOSFET IXYS
IXFB70N100X Power MOSFET IXYS
IXFB72N55Q2 Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFB82N60Q3 Power MOSFET
IXFB80N50Q2 Power MOSFET
IXFB100N50P Power MOSFET
IXFB100N50Q3 HiperFET Power MOSFET Q3-Class
IXFB110N60P3 Power MOSFET

Full PDF Text Transcription

Click to expand full text
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 75 mΩ ≤ 200 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 82 75 200 82 100 5 20 1250 -55 ... +150 150 -55 ...
Published: |